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SPEC NO: DSAD2338 REV NO: V.9 DATE: APR/02/2011
PAGE: 2 OF 7
APPROVED: WYNEC CHECKED: Joe Lee DRAWN: J.Yu
ERP: 1301000966
Selection Guide
Note:
1. Luminous intensity/ luminous Flux: +/-15%.
Absolute Maximum Ratings at TA=25°C
Electrical / Optical Characteristics at TA=25°C
Notes:
1.Wavelength: +/-1nm.
2. Forward Voltage: +/-0.1V.
Notes:
1. 1/10 Duty Cycle, 0.1ms Pulse Width.
2. 2mm below package base.
Part No. Dice Lens Type
Iv (ucd) [1]
@ 10mA
Min. Typ.
SC40-18EWA High Efficiency Red (GaAsP/GaP)
White Diffused 14000 23000
Common Cathode, Rt.
Hand Decimal.
Description
Symbol Parameter Device
Typ.
Max.
Units
Test Conditions
λpeak Peak Wavelength High Efficiency Red
627
nm
IF=20mA
λD [1] Dominant Wavelength High Efficiency Red
625
nm
IF=20mA
Δλ1/2 Spectral Line Half-width High Efficiency Red
45
nm
IF=20mA
C Capacitance High Efficiency Red
15
pF
VF=0V;f=1MHz
VF
[2]
Forward Voltage
Per Segment Or (DP)
High Efficiency Red
8.0
(4.0)
10.0
(5.0)
V
IF=20mA
IR
Reverse Current
Per Segment Or (DP)
High Efficiency Red
20
(10)
uA
VR=5V
(V
R=5V)
Parameter High Efficiency Red
Units
Power dissipation
Per Segment Or (DP)
600
(150)
mW
DC Forward Current
Per Segment Or (DP)
60
(30)
mA
Peak Forward Current [1]
Per Segment Or (DP)
320
(160)
mA
Reverse Voltage
Per Segment Or (DP)
5
(5)
V
Operating / Storage Temperature -40°C To +85°C
Lead Solder Temperature[2] 260°C For 3-5 Seconds
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